Last Updated： Aggregation Period:May 27, 2026～Jun 23, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:May 27, 2026～Jun 23, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:May 27, 2026～Jun 23, 2026
This ranking is based on the number of page views on our site.
1～13 item / All 13 items
Plasma CVD equipment
● Despite its compact design, it can accommodate 5 pieces of 3-inch wafers, 3 pieces of 4-inch wafers, and 1 piece of 8-inch wafers. ● Up to 100-step processes are possible. ● Equipped with a load lock chamber, enabling stable processes. ● Features an interlock mechanism for various safety measures.
![[Data] Silicon processing data using the non-bosch process](https://image.mono.ipros.com/public/product/image/c8d/2000499800/IPROS02347582528443700539.png?w=280&h=280)
We are publishing new data on the non-bosch process for silicon.
This document introduces silicon processing data using the non-Bosch process. It includes results of silicon etching processed with the non-Bosch process using the RIE-800iP. Please take a moment to read it. 【Contents】 ■ Process ■ High aspect ratio Bosch process results ■ Sequential taper shape processing results ■ SEM results of silicon sidewall observation *For more details, please refer to the PDF document or feel free to contact us.
![[Data] - Example of ICP Etching Process for MicroLEDs](https://image.mono.ipros.com/public/product/image/514/2000499814/IPROS23208611525336548350.png?w=280&h=280)
As a result of GaN microLED mesa processing, we have published emission spectral data during the GaN microLED mesa processing!
This document introduces examples of ICP etching for microLEDs. As part of the experiments and results, it includes the outcomes of GaN microLED mesa processing and the photoluminescence spectral data during the GaN microLED mesa processing. Please take a moment to read it. 【Contents】 ■ Experiments and Results ■ Results of GaN MicroLED Mesa Processing ■ Photoluminescence Spectral Data During GaN MicroLED Mesa Processing ■ Summary *For more details, please refer to the PDF document or feel free to contact us.
With a space-saving design, the vacuum pump module can be installed up to 18 meters away from the process module.
This device is compatible with 4, 5, 6, and 8-inch wafers and is designed to form silicon oxide and silicon nitride films on the wafers using the plasma CVD method. The basic configuration consists of three modules: a process module, an RF generator module (one set each for high frequency and low frequency), and a vacuum pump module.
Low-temperature film formation. High insulation, high barrier, uniformity!
"PEGASUS" is a mass production-compatible plasma CVD device that enables the formation process of insulating films and protective films for memory, power devices, and MEMS with precise and stable film deposition at low temperatures. It features a high level of safety due to its interlock mechanism and prevents contamination from the backside by using non-metal materials at the wafer contact points. 【Features】 ■ Low-temperature film deposition ■ Maintenance-friendly ■ Wafer handling ■ Footprint ■ Maintenance support, etc. *For more details, please download the PDF or feel free to contact us.
The compatible film types are DLC, amorphous SiC, etc.! Equipped with a substrate heating mechanism (maximum set temperature: 500°C).
We would like to introduce our "Plasma CVD System for 3D Objects" that we handle. This system can deposit films on three-dimensional objects, and compatible film types include DLC and amorphous SiC, among others. It operates via PC control (sequencer control), allowing for fully automated operation and data logging. We design and manufacture equipment tailored to our customers' needs and budgets, from experimental devices to production systems. Please feel free to contact us for inquiries. 【Features】 ■ Experimental plasma CVD system capable of depositing films on three-dimensional objects ■ Compatible film types: DLC, amorphous SiC, etc. ■ Equipped with a substrate heating mechanism (maximum set temperature: 500°C) ■ Fully automated operation and data logging via PC control (sequencer control) *For more details, please refer to the PDF document or feel free to contact us.
Compact and versatile! This is a high-performance device that can also be adapted for device evaluation processes.
The "SHUTTLELINE(R) series" is a flexible semiconductor manufacturing device that supports PECVD and dry etching for thin film deposition and failure analysis processes. It is compatible with RIE/ICP-RIE and PECVD/ICP-CVD, and is a compact device that can be used for various applications with a range of options. It is recommended for companies and academia that need a compact lab-scale device for R&D or laboratories, or for those looking for a device that can perform both film deposition and etching in one unit. 【Features】 ■ High-precision, damage-free etching process ■ Supports various wafer sizes and shapes, including dies, packaged dies, wafer pieces, and full wafers ■ The shuttle system eliminates the need for hardware changes for different sample sizes ■ Multi-functional support for film deposition/etching in one unit ■ Proven adoption worldwide, with local support through Plasma-Therm LLC's global network *For more details, please feel free to contact us.
Plasma CVD equipment
● Adopts a tray cassette system. 1. Achieves high throughput by reducing transport time. 2. Supports wafers from φ2 inches to φ8 inches by changing trays. ● Adopts a vacuum cassette chamber. 1. Achieves high throughput with a single vacuum exhaust per cassette. 2. Avoids contamination effects and prevents oxidation of the wafer surface. ● Further improves the reliability of the PD-220L reaction chamber, which has a rich track record of deliveries.
Tensile and compressive stress control is possible! It can be flexibly installed to fit the space.
At Samco, Inc., we handle the plasma CVD equipment 'PD-270STLC/PD-2201LC'. The 'PD-270STLC' allows for excellent coverage during film formation at the top, middle, and bottom. Additionally, the 'PD-2201LC' can accommodate a wide range of customer requests, from simultaneous film formation of multiple small-diameter wafers using tray transport to highly uniform film formation through single wafer processing. 【Features】 <PD-270STLC> ■ SiN film formation using liquid precursor SN2 ■ Excellent coverage during film formation at the top, middle, and bottom *For more details, please refer to the PDF document or feel free to contact us.
It is a device with numerous achievements in mass production of power devices, LEDs, MEMS, etc.
The range of membrane quality control is very broad, allowing us to meet the various membrane quality requirements of our customers. Additionally, we have achieved stable automatic transport for compound wafers and special wafers, which had issues with conventional equipment, contributing to improved yield. In our company, we actively customize each device to reflect our customers' requests as much as possible. We have a demonstration machine permanently installed in-house, so please feel free to consult with us.
Includes a leakage microwave detection feature! The sample installation is exchanged using a motorized up-and-down mechanism from the bottom.
The "Plasma CVD Device" is a CVD device that has been extremely simplified for experimental use. The mass flow main unit uses manufacturer products. The display and setting devices are custom-made by our company, which helps reduce the price. Additionally, it is equipped with a mechanism that allows the distance between the plasma generation area and the sample to be adjusted by moving the microwave waveguide up and down. 【Features】 ■ Extremely simplified for experimental use ■ Equipped with a mechanism to move the microwave waveguide up and down ■ Sample attachment is interchangeable via a motorized up-and-down mechanism from the bottom ■ Includes a leakage microwave detection device ■ All internal mechanisms are compactly designed to save space *For more details, please refer to the external link page or feel free to contact us.
Adopting a unique LIA method plasma source, we achieve ultra-fast, high-quality vacuum deposition on flat substrates such as glass and metal!
The "VC-R400G" is a plasma CVD device that employs a unique LIA (Low Inductance Antenna) plasma source, achieving ultra-fast and high-quality vacuum deposition on flat substrates such as glass and metal. It is suitable for experiments, research, evaluation, and prototyping. By using the LIA-type inductively coupled plasma (LIA-ICP), it realizes fast, high-precision, and low-damage vacuum deposition. With multi-point control, it ensures finer uniformity. It offers a variety of manual and automatic options. 【Features】 ■ Suitable for experiments, research, evaluation, and prototyping ■ Achieves fast, high-precision, and low-damage vacuum deposition ■ Ensures finer uniformity through multi-point control of LIA ■ Realizes ultra-fast deposition more than five times compared to conventional methods ■ A wide range of options available *For more details, please refer to the related links or feel free to contact us.
Supports wafers up to φ200mm! This is a plasma CVD system capable of both film deposition and etching.
The "210D model" is a film deposition device using Inductively Coupled Plasma (ICP). By replacing hardware on-site, it can be used as an inductively coupled plasma etching device in just a few minutes of work. With a compact body and a variety of options, it supports various applications such as thin film deposition and trench patterning. 【Features】 ■ Can be used as plasma CVD and RIE with simple hardware replacement ■ Approximately 30% smaller footprint compared to industry standards ■ Easy to operate with an intuitive graphic interface ■ Custom specifications can be accommodated upon request *For more details, please feel free to contact us.
